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| SUD23N06-31L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.031 @ VGS = 10 V 0.045 @ VGS = 4.5 V ID (A)a 23 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive - 12-V Systems 19.5 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information: SUD23N06-31L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 23 16.5 50 23 20 20 100 3a - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 Board, t v 10 sec. Document Number: 72145 S-03536--Rev. A, 24-Mar-03 www.vishay.com t p 10 sec. Steady State RthJC Symbol RthJA Typical 18 40 3.2 Limit 22 50 4 Unit _C/W 1 SUD23N06-31L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistanceb VGS = 10 V, ID = 15 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.037 20 50 0.025 0.031 0.055 0.069 0.045 S W 60 V 1.0 2.0 3.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 1.3 W ID ^ 23 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 23 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 670 140 60 11 3 3 8 15 30 25 15 25 45 40 ns 17 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current Diode Forward Voltage Reverse Recovery Time ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 1.0 30 50 1.5 60 A V ns Notes: b. For design aid only; not subject to production testing. c. Pulse test; pulse width v 300 ms, duty cycle v 2%. d. Independent of operating temperature. www.vishay.com 2 Document Number: 72145 S-03536--Rev. A, 24-Mar-03 SUD23N06-31L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 6 V 40 I D - Drain Current (A) I D - Drain Current (A) 5V 40 50 Transfer Characteristics 30 30 20 4V 20 10 3V 0 0 2 4 6 8 10 10 TC = 125_C 25_C - 55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 32 TC = - 55_C 25_C g fs - Transconductance (S) 24 125_C r DS(on) - On-Resistance ( ) 0.08 0.10 On-Resistance vs. Drain Current 0.06 VGS = 4.5 V 0.04 VGS = 10 V 16 8 0.02 0 0 5 10 15 20 25 0.00 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1000 10 Gate Charge 800 C - Capacitance (pF) Ciss 600 V GS - Gate-to-Source Voltage (V) 8 VDS = 30 V ID = 23 A 6 400 4 200 Coss Crss 0 10 20 30 40 50 60 2 0 0 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72145 S-03536--Rev. A, 24-Mar-03 www.vishay.com 3 SUD23N06-31L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 15 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 25 100 Safe Operating Area Limited by rDS(on) 10 ms 100 ms 20 I D - Drain Current (A) I D - Drain Current (A) 10 15 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc 10 5 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TA - Ambient Temperature (_C) 2 1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 Normalized Effective Transient Thermal Impedance 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72145 S-03536--Rev. A, 24-Mar-03 |
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